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Número de pieza DMGD7N45SSD
Descripción DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMGD7N45SSD
450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
450V
RDS(ON) MAX
4@ VGS = 10V
ID
TA = +25°C
0.85A
Description
This new generation complementary MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
management applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDss Rating for Power Application
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (approximate)
Top View
S1 D1
G1 D1
S2 D2 G1
G2 D2
Top View
Pin Configuration
D1 D2
G2
S1
Equivalent Circuit
S2
Ordering Information (Note 4)
Notes:
Part Number
DMGD7N45SSD-13
Compliance
Standard
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
D7N45SD
YY WW
14
Chengdu A/T Site
DMGD7N45SSD
Document number: DS36011 Rev. 7 - 2
85
D7N45SD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
D7N45SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 7
www.diodes.com
February 2014
© Diodes Incorporated

1 page




DMGD7N45SSD pdf
10
RDS(on)
Limited
1
PW = 100µs
10
RDS(on)
Limited
1
DMGD7N45SSD
0.1 DC
PW = 10s
PW = 1s
PW = 100ms
0.01
0.001
0.1
TJ(max) = 150°C
TA = -25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
PW = 10ms
PW = 1ms
1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
10
RDS(on)
Limited
1
1000
0.1 DC
PW = 10s
PW = 1s
0.01
TJ(max) = 150°C
TA = 85°C
VGS = 10V
Single Pulse
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
0.001 DUT on 1 * MRP Board
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14 SOA, Safe Operation Area
1000
0.1
DC
0.01
0.001
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
TJ(max) = 150°C
PW = 1ms
TA = 125°C
PW = 100µs
VGS = 10V
Single Pulse
0.0001 DUT on 1 * MRP Board
0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 15 SOA, Safe Operation Area
1 D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
RθJA(t) = r(t) * RθJA
RθJA = 98°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 16 Transient Thermal Resistance
10
100 1,000
DMGD7N45SSD
Document number: DS36011 Rev. 7 - 2
5 of 7
www.diodes.com
February 2014
© Diodes Incorporated

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