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PDF DMG7410SFG Data sheet ( Hoja de datos )
| Número de pieza | DMG7410SFG | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMG7410SFG
Green N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
30V
RDS(ON)
20mΩ @ VGS = 10V
27mΩ @ VGS = 4.5V
ID
TA = +25°C
8.0 A
6.5 A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Features
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS (Avalanche) rated
100% Rg tested
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Backlighting
DC-DC Converters
Power Management Functions
Top View
POWERDI3333-8
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
S Pin 1
S
S
G
1
2
8
7
D
D
D
D
Bottom View
36
45
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG7410SFG-7
DMG7410SFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G74
G74 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 for 2010)
WW = Week Code (01 – 53)
N39
POWERDI is a registered trademark of Diodes Incorporated.
DMG7410SFG
Document number: DS35108 Rev. 8 - 2
1 of 7
www.diodes.com
N39 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 for 2010)
WW = Week Code (01 – 53)
July 2015
© Diodes Incorporated
1 page  
1.6
VGS = 10V
ID = 10A
1.4
1.2 VGS = 4.5V
ID = 5A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
2
1.5
ID = 1mA
ID = 250µA
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
1,000
f = 1MHz
CISS
100
COSS
CRSS
10
04
8 12 16 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
DMG7410SFG
0.04
0.035
0.03
VGS = 4.5V
ID = 5A
0.025
0.02
0.015
0.01
VGS = 10V
ID = 10A
0.005
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
30
25
20
TA = 25°C
15
10
5
0
0
10,000
0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1
0 10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Leakage Current
vs. Drain-Source Voltage
DMG7410SFG
Document number: DS35108 Rev. 8 - 2
5 of 7
www.diodes.com
July 2015
© Diodes Incorporated
5 Page | ||
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