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PDF DMG4N60SJ3 Data sheet ( Hoja de datos )

Número de pieza DMG4N60SJ3
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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DMG4N60SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max)
650V
RDS(ON) Max
2.5@ VGS = 10V
ID
TC = +25°C
3.0A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features and Benefits
Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO251 and TO251 (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO251 and TO251 (Type TH)
Top View
Bottom View
GD S
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG4N60SJ3
DMG4N60SJ3
Case
TO251
TO251 (Type TH)
Packaging
75 pieces / Tube
75 pieces / Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
4N60SJ
YYWW
=Manufacturers Marking
4N60SJ = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
DMG4N60SJ3
Document number: DS37698 Rev. 2 - 2
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated

1 page




DMG4N60SJ3 pdf
DMG4N60SJ3
1
D=0.5
D=0.3
D=0.7
D=0.9
0.1 D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
RJC(t)=r(t) * RJC
RJC=1.8/W
Duty Cycle, D=t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1
10
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
(1) Package Type: TO251
D
E2 D2
A
A3
E
L1
L
e
e1
b
c
A2
TO251
Dim Min Max
A 2.20 2.40
A2 0.95 1.15
A3 0.45 0.55
b 0.50 0.70
c 0.45 0.55
D 6.45 6.75
D2 5.20 5.40
E 5.95 6.25
E2 0.95 1.25
e 2.24 2.34
e1 4.43 4.73
L 9.00 9.40
L1 1.30 1.70
All Dimensions in mm
DMG4N60SJ3
Document number: DS37698 Rev. 2 - 2
5 of 7
www.diodes.com
May 2016
© Diodes Incorporated

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