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PDF DMG4N60SCT Data sheet ( Hoja de datos )

Número de pieza DMG4N60SCT
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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DMG4N60SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max)
650V
RDS(ON)
2.5Ω@VGS = 10V
ID
TC = +25°C
4.5A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO220AB 1.85 grams (Approximate)
TO220AB
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMG4N60SCT
Case
TO220AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
4N60SCT
YYWW
= Manufacturer’s Marking
4N60SCT = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
DMG4N60SCT
Document number: DS38642 Rev. 3 - 2
1 of 6
www.diodes.com
May 2016
© Diodes Incorporated

1 page




DMG4N60SCT pdf
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
D=0.7
DMG4N60SCT
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
RθJC (t) = r(t) * RθJC
RθJC = 1.1/W
Duty Cycle, D = t1 / t2
0.1 1
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
10
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220AB
EA
E/2 A1
TO220AB
ØP
Q
Dim Min Max Typ
A 3.56 4.82 -
H1 H1
A1 0.51 1.39 -
A2 2.04 2.92 -
D2 b 0.39 1.01 0.81
D b2 1.15 1.77 1.24
D1 L2
E1 c 0.356 0.61 -
D 14.22 16.51 -
D1 8.39 9.01 -
D2 11.45 12.87 -
L1
e-
- 2.54
b2
L
A2
e1 -
- 5.08
E 9.66 10.66 -
E1 6.86 8.89 -
H1 5.85 6.85 -
L 12.70 14.73 -
L1 - 6.35 -
L2 15.80 16.20 16.00
b
e
e1
c
P 3.54 4.08 -
Q 2.54 3.42 -
All Dimensions in mm
DMG4N60SCT
Document number: DS38642 Rev. 3 - 2
5 of 6
www.diodes.com
May 2016
© Diodes Incorporated

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