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D209L Datasheet PDF - New Jersey Semi-Conductor

Part Number D209L
Description Silicon NPN Power Transistor
Manufacturers New Jersey Semi-Conductor 
Logo New Jersey Semi-Conductor Logo 

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tJ
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon NPN Power Transistor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
• High Switching Speed
• High Reliability
APPLICATIONS
• Switching regulators
• Ultrasonic generators
• High frequency inverters
• General purpose power amplifiers
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
D209L
i
1 23
PIN 1.BASE
2.COLLECTOR
3. BETTER
TO-3PN package
uQi
ABSOLUTE MAXIMUM RATINGS(Ta=25r)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
700 V
VCEO Collector-Emitter Voltage
400 V
VEBO Emitter-Base voltage
9V
Ic Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25'C
Tj Junction Temperature
12 A
100 W
150 •c
Tstg Storage Temperature Range
-55-150
'C
mm
DIM WIN MAX
A 19.90 20.10
B 15.38 15.42
C 4.75 4.85
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.98 3.02
H 3.20 3.40
J 0.595 0.605
K 19.95 20.25
L 1.98 2.02
N 10.89 10.91
q 4.95 5.05
R 3.35 3.45
s 1.995 2.005
u 5.90 'L1L
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and presage dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and-reliable at the time of c?^n
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors



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1. 400V, 12A, 120W, NPN, Transistor

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