|
|
PDF MJ21196G Data sheet ( Hoja de datos )
| Número de pieza | MJ21196G | |
| Descripción | 250 Watt Silicon Type Metal Package Power Transistor | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MJ21196G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
MJ21195G/MJ21196G
®
Pb Free Plating Product
MJ21195G/MJ21196G
Pb
250 Watt Silicon Type Metal Package Power Transistor
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
• Total Harmonic Distortion Characterized
• High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second
SCHEMATIC
PNP
CASE 3
NPN
CASE 3
CASE 1–07
TO–204AA
(TO–3)
1
BASE
1
BASE
EMITTER 2
EMITTER 2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%.
VCEO(sus)
ICEO
Min
250
—
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
250
400
5
400
16
30
5
250
1.43
–āā65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
RθJC
Max
0.7
Unit
°C/W
Typical
—
—
Max Unit
— Vdc
100 µAdc
(continued)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/5
http://www.thinkisemi.com/
1 page  
MJ21195G/MJ21196G
®
10000
10000
Cib Cib
1000
Cob
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21195 Typical Capacitance
100
1000
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
Cob
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJ21196 Typical Capacitance
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100 1000 10000
FREQUENCY (Hz)
100000
Figure 16. Typical Total Harmonic Distortion
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 Ω
+50 V
DUT
0.5 Ω
0.5 Ω
DUT
8.0 Ω
–50 V
Figure 17. Total Harmonic Distortion Test Circuit
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 5/5
http://www.thinkisemi.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MJ21196G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MJ21196 | COMPLEMENTARY SILICON POWER TRANSISTORS |  ON |
| MJ21196 | (MJ21195 / MJ21196) Silicon Power Transistors |  Motorola Semiconductors |
| MJ21196G | 250 Watt Silicon Type Metal Package Power Transistor | Thinki Semiconductor |
| MJ21196G | Silicon Power Transistors |  ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |