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PDF AWB7222 Data sheet ( Hoja de datos )
| Número de pieza | AWB7222 | |
| Descripción | Small-Cell Power Amplifier Module | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AWB7222 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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FEATURES
• InGaP HBT Technology
• -47 dBc ACPR @ ±10 MHz, +27 dBm
• 32 dB Gain
• High Efficiency
• Low Transistor Junction Temperature
• Matched for a 50 Ω System
• Low Profile Miniature Surface Mount Package;
RoHS Compliant
• Multi-Carrier Capability
APPLICATIONS
• WCDMA, HSDPA and LTE Air Interfaces
• Picocell, Femtocell, Home Nodes
• Customer Premises Equipment (CPE)
• Data Cards and Terminals
AWB7222
1.805 - 1.880 GHz
Small-Cell Power Amplifier Module
DATA SHEET - Rev 2.3
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7222 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Its high
linearity and efficiency meet the extremely demanding
needs of small cell infrastructure architectures.
Designed for WCDMA, HSDPA, and LTE air interfaces
operating in the 1.805 GHz to 1.880 GHz band, the
AWB7222 delivers up to +27 dBm of LTE (E-TM1.1)
power with an ACPR better than -47 dBc. It operates
from a convenient +4.5 V supply and provides 32 dB of
gain. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc 1 Vcc 2
RF Input
Matching
Network
Bias
Network
Matching
Network
Matching
Network
Bias
Network
Matching
Network
Power
Detector
VREF
VDET
Figure 1: Block Diagram
05/2015
RF Output
1 page  
AWB7222
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VREF voltage.
VREF
VCC1
RF Input
DETOUT
0.1uF
1000pF
TVS
Diode
100uF 10uF 0.1uF 1000pF
VREF
GND
GND
VCC1
RFIN
GND
VDET
1
2
3
4
5
6
7
0.1uF
100KΩ
4.7KΩ
AWB7222
GND
at slug
14 GND
13 GND
12 RFOUT
11 VCC2
10 GND
9 GND
8 GND
1000pF 0.1uF 10uF 100uF 100uF
RF Output
VCC2
TVS
Diode
Notes:
1. 10uF and 100uF capacitors are optional.
2. Applications that have large supply voltage transients may benefit from the use of TVS
diodes. For such applications, recommended TVS diodes are SM05T1G or SMJ5.0A.
Figure 3: Application Circuit Schematic
5
DATA SHEET - Rev 2.3
05/2015
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AWB7222.PDF ] | |
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