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PDF IXTM6N80A Data sheet ( Hoja de datos )
| Número de pieza | IXTM6N80A | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Standard
Power MOSFET
IXTH / IXTM 6N80
IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V
DSS
I
D25
R
DS(on)
800 V 6 A 1.8 Ω
800 V 6 A 1.4 Ω
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
M
d
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
800 V
800 V
±20 V
±30 V
6A
24 A
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
GS D D25
6N80
6N80A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
800
2
V
4.5 V
±100 nA
250 µA
1 mA
1.8 Ω
1.4 Ω
TO-247 AD (IXTH)
TO-204 AA (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91542E(5/96)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTM6N80A.PDF ] | |
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