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PDF APM9435 Data sheet ( Hoja de datos )

Número de pieza APM9435
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics Coropration 
Logotipo Anpec Electronics Coropration Logotipo



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No Preview Available ! APM9435 Hoja de datos, Descripción, Manual

APM9435
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-4.6A, RDS(ON) = 52m(typ.) @ VGS = -10V
RDS(ON) = 80m(typ.) @ VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
S2
S3
G4
8D
7D
6D
5D
SO 8
S SS
G
Ordering and Marking Information
DD DD
P-Channel MOSFET
APM 9435
APM 9435
H a n d lin g C o d e
Temp. Range
Package Code
APM 9435
XXXXX
Package Code
K : SO -8
O peration Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
Rating
-30
±25
-4.6
-20
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
1
www.anpec.com.tw

1 page




APM9435 pdf
APM9435
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
1 TJ=150°C TJ=25°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V -Source-to-Drain Voltage (V )
SD
80
70
60
50
40
30
20
10
0
0.01
Single Pulse Power
0.1 1
Time (sec)
10 30
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
0.01 0.1
Square Wave Pulse Duration (sec)
1
10 30
Copyright ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
5
www.anpec.com.tw

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