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PDF MBM500E33E2-R Data sheet ( Hoja de datos )
| Número de pieza | MBM500E33E2-R | |
| Descripción | Silicon N-channel IGBT | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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IGBT MODULE
MBM500E33E2-R
Silicon N-channel IGBT 3300V E2 version
Spec.No.IGBT-SP-14005 R0 P1
FEATURES
Soft switching behavior & low conduction loss:
Soft low-injection punch-through High conductivity IGBT.
Low driving power due to low input capacitance MOS gate.
Low noise recovery: Ultra soft fast recovery diode.
High thermal fatigue durability:
(delta Tc=70K, N30,000cycles)
AlSiC base-plate/AlN substrate
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item
Symbol
Unit
MBM500E33E2-R
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Operating Junction Temperature
Maximum Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals (M4/M8)
Mounting (M6)
VCES
VGES
IC
ICp
IF
IFM
Tvj,op
Tvj,max
Tstg
VISO
-
-
V
V
A
A
°C
°C
°C
VRMS
N·m
3,300
20
500 (Tc=95 oC)
1,000
500
1,000
-40 ~ +150
175 (1)
-55 ~ +125
6,000(AC 1 minute)
2/15
(2)
6 (3)
Notes: (1) Only static operation is applicable. Please refer to LD-ES-130737.
(2) Recommended Value 1.80.2/15+0-3N·m
(3) Recommended Value 5.50.5N·m
ELECTRICAL CHARACTERISTICS
Item
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Internal Gate Resistance
Rise Time
Switching Times
Turn On Time
Fall Time
Turn Off Time
Peak Forward Voltage Drop
Reverse Recovery Time
Turn On Loss
Turn Off Loss
Reverse Recovery Loss
Symbol
ICES
IGES
VCE(sat)
VGE(TO)
Cies
Rge
tr
ton
tf
toff
VFM
Unit
mA
nA
V
V
nF
Ω
s
V
trr
Eon(10%)
Eon(full)
Eoff(10%)
Eoff(full)
Err(10%)
Err(full)
s
J/P
J/P
J/P
Min.
-
-
-500
2.5
-
5.5
-
-
0.8
0.7
0.9
2.1
2.2
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
7
-
2.95
3.1
6.5
65
2.1
1.3
1.7
1.7
3.8
2.5
2.5
0.60
0.65
0.70
0.75
0.72
0.79
0.82
0.66
0.78
0.93
Max.
Test Conditions
4 VCE=3,300V, VGE=0V, Tj=25oC
20 VCE=3,300V, VGE=0V, Tj=125oC
+500 VGE=20V, VCE=0V, Tj=25oC
3.5 IC=500A, VGE=15V, Tj=125oC
- IC=500A, VGE=15V, Tj=150oC
7.5 VCE=10V, IC=500mA, Tj=25oC
- VCE=10V, VGE=0V, f=100kHz, Tj=25oC
- VCE=10V, VGE=0V, f=100kHz, Tj=25oC
1.8 VCC=1,650V, IC=500A
2.1 Ls=150nH
2.6 RG(on/off)=5.6Ω/8.2Ω (4)
4.9 VGE=15V, Tj=125oC
3.0 IF=500A, VGE=0V, Tj=125oC
- IF=500A, VGE=0V, Tj=150oC
0.87
VCC =1,650V, IF=500A, Ls=150nH
Tj=125oC, RG(on)=5.6Ω, VGE=15V
0.95
-
Tj=125oC
-
0.86
-
-
0.80
-
Tj=150oC
Tj=125oC
VCC=1,650V, IC=500A,
Ls=150nH,
Tj=150oC
RG(on/off)=5.6Ω/8.2Ω
VGE=±15V
(4)
Tj=125oC
- Tj=150oC
Notes:(4) RG is the test condition’s value for evaluation of the switching times, not
recommended value. Please, determine the suitable RG value after the measurement of
switching waveforms(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
1 page  
IGBT MODULE
MBM500E33E2-R
DYNAMIC CHARACTERISTICS
2.0
【Conditions】
Ls=150nH
VCC=1650V
VGE=+15V/-15V
RG(on)=5.6Ω
Inductive Load
1.5
Typical
Eon(full)
Tj=150oC
2.0
【Conditions】
Ls=150nH
VCC=1650V
VGE=+15V/-15V
RG(off)=8.2Ω
Inductive Load
1.5
Spec.No.IGBT-SP-14005 R0 P5
Typical
Eoff(full)
Tj=150oC
Eon(full)
Tj=125oC
1.0 1.0
Eon(10%)
0.5 Tj=125oC
0.5
Eoff(10%)
Tj=125oC
Eoff(full)
Tj=125oC
0.0
0
200 400 600 800
Collector Current, IC (A)
1000
Turn-on loss vs. Collector current
2.0
【Conditions】
Ls=150nH
VCC=1650V
VGE=+15V/-15V
RG(on)=5.6Ω
Inductive Load
1.5
Typical
Err(full)
Tj=150oC
0.0
0
200 400 600 800
Collector Current, IC (A)
1000
Turn-off loss vs. Collector current
8.0
【Conditions】
Ls=150nH
VCC=1650V
VGE=+15V/-15V
RG(on/off)=5.6Ω/8.2Ω
Tj=125oC
Inductive Load
6.0
Typical
1.0
Err(full)
Tj=125oC
Err(10%)
0.5 Tj=125oC
0.0
0
200 400 600 800
Forward Current, IF (A)
1000
Recovery loss vs. Forward current
4.0
toff
ton
2.0
tr
tf
0.0
0
200 400 600 800
Collector Current, IC,IF (A)
trr
1000
Switching time vs. Collector current
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