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PDF 5N90 Data sheet ( Hoja de datos )
| Número de pieza | 5N90 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 5N90 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SEMICONDUCTOR
5N90 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(5A, 900Volts)
DESCRIPTION
The Nell 5N90 is a three-terminal silicon device with
current conduction capability of 5A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 900V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
PWM motor controls, bridge circuits and general
purpose switching applications.
D
GDS
TO-220AB
(5N90A)
GDS
TO-220F
(5N90AF)
FEATURES
RDS(ON) = 2.80Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 13pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
5
900
2.80 @ VGS = 10V
40
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
TJ=25°C to 150°C
RGS=20KΩ
TC=25°C
TC=100°C
IAR=5A, RGS=50Ω, VGS=10V
IAS=5A, L=52.8mH
PD
TO-220AB
Total power dissipation (Derating factor above 25°C) TC=25°C
TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
VALUE
900
900
±30
5
3.1
12
5
5.1
660
4.0
125
38
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W(W /°C)
ºC
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD=50V, L=52.8mH, IAS=5A, RGS=25Ω,starting TJ=25˚C
3.ISD ≤ 5.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 8
1 page  
SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
10
VGS
9 Top: 15.0V
10.0V
8
7.0V
6.0V
5.0V
7 Bottorm: 4.0V
6
5
1. 250µs Pulse Test
2. TC = 25°C
15V
10V
7V
6V
4
3
2
5V
1
VGS = 4V
0
0 5 10 15 20 25 30 35 40 45 50
Drain-source voltage, VDS (V)
5N90 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
8
7
Tc = -25ºC
6
25ºC
5
75ºC
4
3
2
Note:
1 1. VDS = 20V
2. 250µs Pulse Test
0
0 2 4 6 8 10 12
Gate-source voltage, VGS (V)
Fig.3 On-Resistance variation vs. Gate voltage
9
Note:
8 1. ID = 2.5A
2. Single pulse
7
6
5 Tc = 75°C
4
3 25°C
2 -25°C
1
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
Gate-to-Source Voltage, VGS (V)
Fig.4 On-State resistance vs. Case temperature
10
9
8
7
6
5
4
3
2
1
0
-50 -25
0
Single pulse
= 10V, I D = 2.5A
V GS
25 50 75 100 125 150
Case temperature, TC (°C)
Fig.5 Typical forward transcondutance
7
5
3
2
1.0
7
5
3
2
Tc = 25°C
Tc = -25°C
75°C
0.1
7
5
3
0.01 2 3
5 7 0.1 2 3
Note:
1. VDS = 20V
2. 20µs Pulse Test
5 71.0 2 3 5 7 10
Drain current, ID (A)
Fig.6 Typical source-drain diode forward voltage
1.0 VGS = 0V
7 Single pulse
5
3
2
1.0
7
5
3
2
Tc = 75°C
Tc = 25°C
Tc = -25°C
0.1
7
5
3
2
0.01
0.2 0.4 0.6 0.8 1.0 1.2
Source-Drain voltage, VSD (V)
www.nellsemi.com
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 5N90.PDF ] | |
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