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Datasheet 2SA1837 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1837 | PNP Epitaxial Silicon Transistor PNP
PNP Epitaxial Silicon Transistor
R
NPN
2SA1837
VCEO=-230V (min) 2SC4793
fT=70MHz(Typ.) RoHS
Package
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector voltage VCEO=-230V (min) Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) RoHS product
TO-220MF
不ORDER MESS |  JILIN SINO | transistor |
| 2 | 2SA1837 | SILICON PNP TRANSISTOR 2SA1837(3CA1837)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于一般功率放大和驱动级放大。
Purpose: Power amplifier, driver stage amplifier applications.
特点: 特征频率高,与 2SC4793(3DA4793)互补。
Features: High transition frequency, complementary to 2SC4793 |  LZG | transistor |
| 3 | 2SA1837 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1837
Power Amplifier Applications Driver Stage Amplifier Applications
2SA1837
Unit: mm
• High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-e |  Toshiba Semiconductor | transistor |
| 4 | 2SA1837 | PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SA1837
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
FEATURES
* High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793
ORDERING INFORMATION
Order Number
Lead Free
Halogen-Free
Packag |  Unisonic Technologies | transistor |
| 5 | 2SA1837 | POWER TRANSISTOR www.DataSheet4U.net
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1837
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications. � |  Inchange Semiconductor | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY Inchange Semiconductor transistor | |
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