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Número de pieza | SSFT3906 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silikron Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSFT3906 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Main Product Characteristics:
VDSS
30V
RDS(on) 3.2mohm(typ.)
ID 90A
Features and Benefits:
TO220
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSFT3906
SSFT3906
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
90
60
180
91
0.61
30
± 20
304
45
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.08.08
www.silikron.com
Version : 2.0
page 1 of 7
1 page Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION
SSFT3906
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP 1
e
e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
Dimension In Millimeters
Min
4.400
1.270
2.590
0.770
1.230
0.480
15.100
9.000
0.050
10.060
-
1.400
Nom
4.550
1.300
2.690
-
-
0.500
15.400
9.100
0.285
10.160
8.700
1.500
2.54BSC
5.08BSC
Max
4.700
1.330
2.790
0.900
1.360
0.520
15.700
9.200
0.520
10.260
-
1.600
6.100
6.300
6.500
12.750
12.960
13.170
- - 3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
- 0.200
-
50 70 90
10 30 50
Min
0.173
0.050
0.102
0.030
0.048
0.019
-
0.354
0.002
0.396
-
0.055
0.240
0.502
-
0.141
0.107
-
50
10
Dimension In Inches
Nom
0.179
0.051
0.106
-
-
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
Max
0.185
0.052
0.110
0.035
0.054
0.020
-
0.362
0.020
0.404
-
0.063
0.248
0.256
0.510
0.519
- 0.156
0.073REF
0.142
0.143
0.110
0.113
0.008
-
70 90
30 50
©Silikron Semiconductor CO.,LTD.
2011.08.08
Version : 2.0
www.silikron.com
page 5 of 7
5 Page |
Páginas | Total 7 Páginas | |
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