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What is 1SS184?

This electronic component, produced by the manufacturer "EIC", performs the same function as "SILICON EPITAXIAL PLANAR DIODE".


1SS184 Datasheet PDF - EIC

Part Number 1SS184
Description SILICON EPITAXIAL PLANAR DIODE
Manufacturers EIC 
Logo EIC Logo 


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Certificate TH97/10561QM
Certificate TW00/17276EM
1SS184
PRV : 85 Volts
Io : 100 mA
FEATURES :
* Small package
* Low forward voltage
* Fast reverse recovery time
* Small total capacitance
* Ultra high speed switching application
* Pb / RoHS Free
SILICON EPITAXIAL
PLANAR DIODE
SOT-23
0.19
0.08
1.40
0.95
0.50
0.35
0.100
0.013
3.10
2.70
3
1
2
2.04
1.78
1.02
0.89
3
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* Marking Code : B3
12
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Maximum Peak Forward Current
Average Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IF(AV)
IFSM
Ptot
TJ
TSTG
Value
85
80
300
100
2
150
125
-55 to +125
Unit
V
V
mA
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta =25 °C)
Parameter
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IR = 10 mA
Symbol
VF
IR
CT
Trr
Min.
-
-
-
-
-
-
-
TYP
0.6
0.72
0.9
-
-
0.9
1.6
Max.
-
-
1.2
0.1
0.5
3
4
Unit
V
µA
pF
ns
Page 1 of 2
Rev. 01 : September 20, 2006


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