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PDF MDF10N60G Data sheet ( Hoja de datos )
| Número de pieza | MDF10N60G | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDF10N60G
N-Channel MOSFET 600V, 10A, 0.7Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 10A
RDS(ON) ≤ 0.7Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
`
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derateabove 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
May. 2011 Version 1.4
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
600
±30
10*
6.3*
40*
48
0.38
15.6
4.5
520
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
2.6
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
May. 2011 Version 1.4
Symbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
Min
4.50
0.63
1.15
0.33
15.47
9.60
2.34
6.48
12.24
2.79
2.52
3.10
3.00
Nom
2.54
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.84
6.90
13.72
3.67
2.96
3.50
3.55
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDF10N60G.PDF ] | |
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