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PDF 5SNE0800E330100 Data sheet ( Hoja de datos )
| Número de pieza | 5SNE0800E330100 | |
| Descripción | IGBT Module | |
| Fabricantes | ABB | |
| Logotipo |  |
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VCE =
IC =
3300 V
800 A
ABB HiPakTM
IGBT Module
5SNE 0800E330100
PRELIMINARY
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1562-01 July 07
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF Either diode
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave, either diode
tpsc
VCC = 2500 V, VCEMCHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol t = 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Ms Base-heatsink, M6 screws
4
Mounting torques 2)
Mt1 Main terminals, M8 screws
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
3300
800
1600
20
7700
800
1600
8000
V
A
A
V
W
A
A
A
10 µs
6000
150
125
125
125
6
10
3
V
°C
°C
°C
°C
Nm
1 page  
5SNE 0800E330100
1600
1400
1200
1000
800
25 °C
125 °C
600
400
200
VGE = 15 V
0
0123456
VCE [V]
1600
1400
VCE = 20 V
1200
1000
800
600
125 °C
400
25 °C
200
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 1 Typical on-state characteristics, chip level
Fig. 2 Typical transfer characteristics, chip level
1600
1400
1200
1000
800
600
400
200
0
0
17 V
15 V
13 V
11 V
9V
Tvj = 25°C
12345
VCE [V]
1600
1400
1200
1000
800
600
400
200
0
0
17 V
15 V
13 V
11 V
9V
1234
VCE [V]
Tvj = 125 °C
567
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 5 of 9
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