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PDF 5SNA0800N330100 Data sheet ( Hoja de datos )
| Número de pieza | 5SNA0800N330100 | |
| Descripción | IGBT Module | |
| Fabricantes | ABB | |
| Logotipo |  |
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VCE =
IC =
3300 V
800 A
ABB HiPakTM
IGBT Module
5SNA 0800N330100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA 1591-00 Jan 07
Maximum rated values 1)
Parameter
Symbol Conditions
min
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 2500 V, VCEMCHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Mounting torques 2)
Ms Base-heatsink, M6 screws
Mt1 Main terminals, M8 screws
4
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
3300
800
1600
20
7700
800
1600
8000
10
6000
150
125
125
125
6
10
3
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
1 page  
5SNA 0800N330100
1600
1400
1200
1000
800
25 °C
125 °C
600
400
200
VGE = 15 V
0
0123456
VCE [V]
1600
1400
VCE = 20 V
1200
1000
800
600
125 °C
400
25 °C
200
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 1 Typical on-state characteristics, chip level
Fig. 2 Typical transfer characteristics, chip level
1600
1400
1200
1000
800
600
400
200
0
0
17 V
15 V
13 V
11 V
9V
Tvj = 25°C
12345
VCE [V]
1600
1400
1200
1000
800
600
400
200
0
0
17 V
15 V
13 V
11 V
9V
1234
VCE [V]
Tvj = 125 °C
567
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1591-00 Jan 07
page 5 of 9
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