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PDF BU120 Data sheet ( Hoja de datos )
| Número de pieza | BU120 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU120
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS) = 200V(Min)
APPLICATIONS
·Designed for horizontal deflection output stage of CTV
receivers and high voltalge, fast switching and industrial
application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-peak
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
400 V
200 V
7V
10 A
15 A
3.0 A
100
200
-65~200
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc website：www.iscsemi.cn
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BU120.PDF ] | |
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