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What is GB01SHT12-CAL?

This electronic component, produced by the manufacturer "GeneSiC", performs the same function as "High Temperature Silicon Carbide Power Schottky Diode".


GB01SHT12-CAL Datasheet PDF - GeneSiC

Part Number GB01SHT12-CAL
Description High Temperature Silicon Carbide Power Schottky Diode
Manufacturers GeneSiC 
Logo GeneSiC Logo 


There is a preview and GB01SHT12-CAL download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! GB01SHT12-CAL datasheet, circuit

 
High Temperature Silicon Carbide
Power Schottky Diode
Features
1200 V Schottky rectifier
210°C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT12-CAL  
VRRM
IF @ 25 oC
QC
= 1200 V
= 2.5 A
= 6 nC
 
Die Size = 0.9 mm x 0.9 mm
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
TC = 25 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 9.52
Values
1200
2.5
0.75
1.3
8
65
0.5
26
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 0.75 A, Tj = 25 °C
IF = 0.75 A, Tj = 210 °C
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 210 °C
QC
ts
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V
VR = 960 V
VR = 400 V
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.7
2.8
1
10
6
11
< 17
66
10
8
max.
10
100
Unit
V
A
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
 
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/   
Pg 1 of 4

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GB01SHT12-CAL equivalent
 
SPICE Model Parameters
Die Datasheet
GB01SHT12-CAL  
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB01SHT12-CAL_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB01SHT12-CAL.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.0
$
* $Date: 05-SEP-2013
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB01SHT12-CAL SPICE Model
*
.SUBCKT GB01SHT12 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0099); Temperature Dependant Resistor
D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model
D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model
.MODEL GB01SHT12_25C D
+ IS
1.88E-18
RS
0.9255
+N 1
IKF 98.29122743
+ EG
1.2
XTI 3
+ CJO
7.90E-11
VJ
0.367
+ M 1.63
FC 0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK 1200
+ IAVE
1
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB01SHT12_PIN D
+ IS
2.76E-16
RS
0.84243
+ N 3.791461
IKF 2.98675
+ EG
3.23
XTI 30
+ FC
0.5
TT 0
+ BV
1200
IBV 1.00E-03
+ VPK
1200
IAVE
1
+ TYPE
SiC_PiN
.ENDS
*
* End of GB01SHT12-CAL SPICE Model
Sep 2013
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 1
 


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Part NumberDescriptionMFRS
GB01SHT12-CALThe function is High Temperature Silicon Carbide Power Schottky Diode. GeneSiCGeneSiC

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