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Datasheet GB01SHT06-CAL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GB01SHT06-CAL | High Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior � |  GeneSiC | diode |
GB0 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GB01SHT06-CAL | High Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior � GeneSiC diode | | |
| 2 | GB01SHT06-CAU | High Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior � GeneSiC diode | | |
| 3 | GB01SHT12-CAL | High Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode
Features
1200 V Schottky rectifier 210°C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior � GeneSiC diode | | |
| 4 | GB02N120 | SGB02N120
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high rugg  Infineon Technologies AG data | | |
| 5 | GB042 | PCB to PCB Connector ANN REN connector | | |
| 6 | GB05XP120KTPBF | Three Phase Inverter Module www.DataSheet.co.kr
GB05XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A
FEATURES
• Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Op  Vishay Siliconix inverter | | |
| 7 | GB082A | SPECIFICATIONS FOR LCD MODULE JEWEL HILL ELECTRONIC CO.,LTD.
JEWEL HILL ELECTRONIC CO.,LTD.
SPECIFICATIONS FOR LCD MODULE
Module No.
GB082A
Office Address: Rm. 518,5/F., 101 Shangbu Industrial District, HuaqiangNorthRoad, Shenzhen, China TEL : (86)-755-83362489 83617492 FAX: (86)-755-83286396 83365871 E-  Jewel Hill Electronic lcd | |
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| Número de pieza | Descripción | Fabricantes | |
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