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Datasheet BZX55C110 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BZX55C110Silicon Zener Diode, Rectifier

BZX55C SILICON PLANAR ZENER DIODES The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request. Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Max. 0.45 Max.
SEMTECH
SEMTECH
diode
2BZX55C110500mW ZENER DIODES

ZENER DIODES SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –55°C TO+200°C 500mW ZENER DIODES / DO-35/DL-35 (MINI MELF) TYPE Nominal Zener Voltage VZ @IZT Min BZX / BZV 55 C 2V4 BZX / BZV 55 C 2V7 BZX / BZV 55 C 3V0 BZX / BZV 55 C 3V3 BZX / BZV 55 C 3V6 BZX / BZV 55 C 3V9 BZX / BZV
SENSITRON
SENSITRON
diode
3BZX55C110Silicon Zener Diode, Rectifier

BZX55 ... SILICON PLANAR ZENER DIODES Features Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. DIM ENSIONS DIM A B C D inches Min. 1.083 Max. 0.154 0.075 0.020 Min. 27.50 mm Max.
GOOD-ARK Electronics
GOOD-ARK Electronics
diode
4BZX55C110SILICON ZENER DIODES

BZX55C2V4 ~ BZX55C200 VZ : 2.4 - 200 Volts PD : 500 mW SILICON ZENER DIODES DO - 35 1.00 (25.4) min. 0.079(2.0 )max. FEATURES : * * * * * Complete 2.4 to 200 Volts High surge current capability High peak reverse power dissipation High reliability Low leakage current 0.150 (3.8) max. 0.020 (0.52
EIC discrete Semiconductors
EIC discrete Semiconductors
diode
5BZX55C110Diode Zener Single 110V 5% 500mW 2-Pin DO-35

New Jersey Semiconductor
New Jersey Semiconductor
diode


BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode
2BZX10Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
diode
3BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode
4BZX11Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
diode
5BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode
6BZX12Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
diode
7BZX13Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
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