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Número de pieza | 2SC3582 | |
Descripción | Silicon NPN RF Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC3582 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3582
DESCRIPTION
·Low Noise Figure, High Gain, and High Current Capability
Achieve a Very Wide Dynamic Range and Excellent Linearity.
·Low Noise and High Gain
NF = 1.2 dB TYP. @f = 1.0 GHz
Ga = 12 dB TYP. @f = 1.0 GHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
1.5 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
65 mA
0.6 W
150 ℃
Tstg Storage Temperature Range
-65~150
℃
isc website:www.iscsemi.cn
1
1 page INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3582
VCE = 8 V, IC = 20 mA, ZO = 50Ω
f (MHz)
︱S11︱
∠S11
200
0.333
-51.4
400
0.195
-49.2
600
0.158
-44.3
800
0.156
-41.0
1000
0.146
-35.8
1200
0.143
-30.7
1400
0.134
-25.8
1600
0.132
-22.3
1800
0.131
-20.0
2000
0.130
-17.8
︱S21︱
17.197
8.729
6.149
4.603
3.997
3.205
2.939
2.463
2.396
2.107
∠S21
107.7
89.7
78.8
68.7
60.4
54.1
46.7
38.1
30.7
22.1
︱S12︱
0.053
0.064
0.078
0.111
0.136
0.168
0.185
0.218
0.234
0.238
∠S12
97.5
90.1
80.3
70.0
64.2
58.1
53.2
47.3
41.3
36.5
︱S22︱
0.638
0.585
0.573
0.549
0.537
0.524
0.524
0.524
0.557
0.579
∠S22
-29.7
-31.8
-35.0
-38.2
-42.4
-57.1
-55.4
-62.0
-68.5
-74.8
S-PARAMETER
S11e, S22e-FREQUENCY
CONDITION VCE = 8 V
200MHz Step
isc website:www.iscsemi.cn
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SC3582.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC3580 | SMALL-SIGNAL TRANSISTOR | Isahaya Electronics |
2SC3581 | SMALL-SIGNAL TRANSISTOR | Isahaya Electronics Corporation |
2SC3582 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | NEC |
2SC3582 | Silicon NPN RF Transistor | Inchange Semiconductor |
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