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What is MBNP2074G6?

This electronic component, produced by the manufacturer "CYStech Electronics", performs the same function as "N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device".


MBNP2074G6 Datasheet PDF - CYStech Electronics

Part Number MBNP2074G6
Description N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device
Manufacturers CYStech Electronics 
Logo CYStech Electronics Logo 


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CYStech Electronics Corp.
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 1/10
N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device
MBNP2074G6
Description
The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single
TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low gate charge
Low on-resistance
Fast switching speed
Pb-free package
Equivalent Circuit
MBNP2074G6
Outline
TSOP-6
C2
S1
D1
GGate B : Base
SSource E : Emitter
DDrain C : Collector
B2
E2
G1
MBNP2074G6
CYStek Product Specification

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MBNP2074G6 equivalent
CYStech Electronics Corp.
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 5/10
N-channel MOSFET Characteristic Curves(Cont.)
Static Drain-Source On-State Resistance vs Drain Current
Static Drain-Source On-State Resistance vs Drain Current
100 10
VGS=2.5V
VGS=4V
Ta=25°C
Ta=25°C
Ta=75°C
10
Ta=125°C
Ta=75°C
Ta=125°C
1
1 10 100 1000
Drain Current---ID(mA)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
9
ID=50mA
8
7
6
5 TA=75°C
4 TA=125°C
3
2
TA=25°C
1
0
0 2 4 6 8 10
Gate-Source Voltage---VGS(V)
Reverse Drain Current vs Source-Drain Voltage(I)
1000
1
1 10 100 1000
Drain Current---ID(mA)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
9
8 ID=100mA
7
6
5 TA=75°C
4
TA=125°C
3
2
TA=25°C
1
0
0 2 4 6 8 10
Gate-Source Voltage---VGS(V)
Reverse Drain Current vs Source-Drain Voltage(II)
1000
100
TA=125°C
10
1
TA=25°C
TA=75°C
100
VGS=4V
10
1
VGS=0V
0.1
0
0.5 1
Source-Drain Voltage-VSD(V)
0.1
1.5 0
0.5 1
Source-Drain Voltage-VSD(V)
1.5
MBNP2074G6
CYStek Product Specification


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MBNP2074G6 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
MBNP2074G6The function is N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device. CYStech ElectronicsCYStech Electronics

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