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What is 1MBI1200U4C-120?

This electronic component, produced by the manufacturer "Fuji Electric", performs the same function as "IGBT MODULE".


1MBI1200U4C-120 Datasheet PDF - Fuji Electric

Part Number 1MBI1200U4C-120
Description IGBT MODULE
Manufacturers Fuji Electric 
Logo Fuji Electric Logo 


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1MBI1200U4C-120
IGBT MODULE (U series)
1200V / 1200A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1200
±20
1600
1200
3200
2400
1200
2400
7350
150
-40 to +125
2500
5.75
10
2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip
Symbols
Conditions
ICES VGE = 0V, VCE = 1200V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr
toff
VCC = 600V, IC = 1200A
VGE = ±15V, Tj = 125°C
Rgon = 2Ω, Rgoff = 1Ω
tf
VF
(main terminal) VGE = 0V
VF IF = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr IF = 1200A
R lead
Characteristics
min. typ. max.
- - 1.0
- - 2400
5.5 6.5 7.5
- 2.08 2.25
2.28 -
- 1.90 2.05
2.10 -
- 135 -
- 0.90 -
- 0.50 -
- 0.80 -
- 0.20 -
- 1.83 2.00
- 1.93 -
- 1.65 1.80
- 1.75 -
- 0.35 -
- 0.15 -
Units
V
V
A
W
°C
°C
VAC
N·m
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
IGBT
FWD
Contact thermal resistance (1device)
Rth(c-f) with Thermal Compound (*3)
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
Characteristics
min. typ. max.
- - 0.017
- - 0.030
- 0.006 -
Units
°C/W

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1MBI1200U4C-120 equivalent
1MBI1200U4C-120
Outline Drawings, mm
IGBT Modules
Equivalent Circuit Schematic
sense collector C
C
gate G
sense emitter E
E
C
E
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 1MBI1200U4C-120 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
1MBI1200U4C-120The function is IGBT MODULE. Fuji ElectricFuji Electric
1MBI1200U4C-120The function is Power Devices (IGBT). ETCETC

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