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PDF SW3N80C Data sheet ( Hoja de datos )
| Número de pieza | SW3N80C | |
| Descripción | N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET | |
| Fabricantes | Samwin | |
| Logotipo |  |
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SW3N80C
N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Features
TO-220F
TO-251 TO-252
High ruggedness
Low RDS(ON) (Typ 3.9Ω)@VGS=10V
Low Gate Charge (Typ 12.5nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Industrial power，LED,Adapter
1
23
1
23
2
1
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BVDSS : 800V
ID : 3.0A
RDS(ON) : 3.9Ω
2
1
3
Order Codes
Item Sales Type
1 SW F 3N80C
2 SW I 3N80C
3 SW D 3N80C
Marking
SW3N80C
SW3N80C
SW3N80C
Package
TO-220F
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@TC=25oC)
Derating factor above 25oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-220F TO-251/TO-252
800
3.0*
1.9*
12
±30
260
20
5
18.4 147
0.15 1.1
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
300 oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
TO-220F TO-251/TO-252
6.8 0.85
50 70
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 3.0
Unit
oC/W
oC/W
1/6
1 page  
Fig. 11. Transient thermal response curve
(TO-251/TO-252)
SW3N80C
Fig. 12. Gate charge test circuit & waveform
Fig. 13. Switching time test circuit & waveform
10VIN
RL
VDS
RGS DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 3.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW3N80C.PDF ] | |
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