A06N03N Datasheet PDF - Excelliance MOS
| Part Number | A06N03N | |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Manufacturers | Excelliance MOS | |
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There is a preview and A06N03N download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMA06N03AN
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
80
50
170
53
140
40
69
27
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
1.8
°C / W
75
2013/8/21
p.1
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G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID = 3 0 A
10
8
6
4
V DS =5V
15V
10V
2
0
0 15 30
45
Q g ,G A T E C H A R G E ( n C )
300
200
100
R d s ( o n ) Limit
50
20
10
5
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s
1ms
10ms
D1C00ms
2
1
0.5
0.5
VG S = 10V
RSIθ N J C G= L1E. 8P° UC/LWSE
Tc = 25° C
1 10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,Time ( mSEC )
1.Duty Cycle,D =
t1
t2
2.Rθ J C =1.8°C/W
3.TJ ‐ T C = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
2013/8/21
EMA06N03AN
10 4
C A P A C IT A N C E C H A R A C T E R IS T IC S
10 3
10 2
C iss
C o ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D R A IN ‐S O U R C E V O L T A G E ( V )
30
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SRθI N JC G= L1E. 8P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1
10 100
SINGLE PULSE TIME ( mSEC )
1000
1000
p.5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for A06N03N electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ A06N03N.PDF Datasheet ] | |
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| A06N03N | The function is N-Channel Logic Level Enhancement Mode Field Effect Transistor. Excelliance MOS | |
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