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PDF MTN4N60BE3 Data sheet ( Hoja de datos )
| Número de pieza | MTN4N60BE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C128FP
Issued Date : 2016.03.21
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN4N60BE3 BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2.4A
600V
4.0A
1.8Ω
Description
The MTN4N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Open Framed Power Supply
• Adapter
• STB
Ordering Information
Device
MTN4N60BE3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN4N60BE3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C128FP
Issued Date : 2016.03.21
Revised Date :
Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Brekdown Voltage vs Ambient Temperature
1.4
Ciss
1000
100 Coss
f=1MHz
Crss
10
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
10μs
1ms
10ms
1 100ms
DC
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=1.25°C/W
Single pulse
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5 VGS=10V, RθJC=1.25°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
1.2
1.0
0.8 ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=120V
8
VDS=300V
6
4 VDS=480V
2
0
0
1.4
ID=4A
4 8 12 16 20
Qg, Total Gate Charge(nC)
24
Threshold Voltage vs Junction Tempearture
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN4N60BE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN4N60BE3.PDF ] | |
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