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PDF MTN2304M3 Data sheet ( Hoja de datos )
| Número de pieza | MTN2304M3 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C737M3
Issued Date : 2012.07.26
Revised Date : 2013.08.12
Page No. : 1/8
30V N-CHANNEL Enhancement Mode MOSFET
MTN2304M3
BVDSS
ID
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
RDSON(TYP)
VGS=10V, ID=5A
VGS=4.5V, ID=4A
30V
6A
20mΩ
28mΩ
Symbol
MTN2304M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
DG D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation (TA=25℃)
VDS
VGS
ID
ID
IDM
Pd
30
±20
6
4.8
20 *1
1.2 *2
Linear Derating Factor
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Note : *1. Pulse width limited by safe operating area.
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad.
Unit
V
V
A
A
A
W
W/ °C
°C
MTN2304M3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
1.4
1.2 Mounted on FR-4 board
with 1 in² pad area
1
0.8
0.6
0.4
0.2
0
0 50 100 150
TA, Ambient Temperature(℃)
200
Spec. No. : C737M3
Issued Date : 2012.07.26
Revised Date : 2013.08.12
Page No. : 5/8
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=104°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
MTN2304M3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTN2304M3.PDF ] | |
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