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PDF MTN2300AN3 Data sheet ( Hoja de datos )

Número de pieza MTN2300AN3
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo



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No Preview Available ! MTN2300AN3 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2015.01.06
Revised Date :
Page No. : 1/8
20V N-Channel Enhancement Mode MOSFET
MTN2300AN3 BVDSS
ID@VGS=4.5V, TA=25°C
RDSON@VGS=4.5V, ID=3.6A
RDSON@VGS=2.5V, ID=3.1A
20V
3.6A
29mΩ(typ.)
39mΩ(typ.)
Features
Simple drive requirement
Small package outline
Capable of 2.5V gate drive
Pb-free lead plating and halogen-free package
Symbol
MTN2300AN3
Outline
SOT-23
D
GGate
SSource
DDrain
GS
Ordering Information
Device
MTN2300AN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2300AN3
CYStek Product Specification

1 page




MTN2300AN3 pdf
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2015.01.06
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Maximum Safe Operating Area
100
10
100μs
1ms
1
RDS(ON) Limited
10ms
100ms
0.1
Ta=25°C, Single pulse,
VGS=10V, Tj=150°C
DC
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Gate Threshold Voltage vs Ambient Temperature
1
ID=250μA
0.8
0.6
0.4
0.2
-60
-20 20 60 100 140
Junction Temperature-Tj(°C)
180
Gate Charge Characteristics
10
8
6
VDS=10V
ID=3.6A
4
2
0
024 68
Qg, Total Gate Charge(nC)
10
Maximum Drain Current vs Junction Temperature
4.5
4
3.5
3
2.5
2
1.5
1
0.5 TA=25°C, VGS=10V
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
MTN2300AN3
Single Pulse
0.001
0.01 0.1
1
t1, Square Wave Pulse Duration(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
10 100
CYStek Product Specification

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