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PDF 2SK3876-01R Data sheet ( Hoja de datos )
| Número de pieza | 2SK3876-01R | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji | |
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2SK3876-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200407
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
VDS 900 V
Continuous Drain Current
VDSX
ID
900 V VGS=-30V
13 A
Equivalent circuit schematic
Pulsed Drain Current
Gate-Source Voltage
ID(puls]
VGS
±52 A
±30 V
Drain(D)
Non-Repetitive
Note *1
Maximum Avalanche current
IAS
13 A
Repetitive
Maximum Avalanche current
IAR
6.5 A
Gate(G)
Non-Repetitive
EAS
1006
mJ Note *2
Source(S)
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
EAR
dVDS/dt
dV/dt
PD
Tch
17.0
40
5
170
3.13
+150
mJ Note *3
kV/µs VDS =< 900V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
Note *1:Tch<= 150°C
Note *2:StartingTch=25°C,IAS=5.2A,L=67.5mH,
VCC=100V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
Temperature range
Tstg -55 to +150 °C
See to the ‘Transient Thermal impedance’
Isolation Voltage
VISO
2
kVrms t=60sec f=60Hz
graph.
Note *4:IF=< -ID, -di/dt=50A/µs,VCC=< BVDSS, Tch=< 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V Tch=25°C
VDS=720V VGS=0V
VGS=±30V VDS=0V
ID=6.5A VGS=10V
Tch=125°C
ID=6.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=6.5A
VGS=10V
RGS=10 Ω
VCC=450V
ID=13A
VGS=10V
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
900
3.0
6.0
Typ.
0.79
12
1750
220
13
20
12
60
15
46
14
17
1.10
4.5
25
Max. Units
V
5.0 V
25 µA
250
100 nA
1.00 Ω
S
2625
pF
330
19.5
30
ns
18
90
22.5
69 nC
21
26
1.50 V
µs
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.735 °C/W
40.0 °C/W
www.fujielectric.co.jp/fdt/scd
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| PDF Descargar | [ Datasheet 2SK3876-01R.PDF ] | |
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