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Número de pieza | MT3S11T | |
Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MT3S11T (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S11T
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
• Superior performance in oscillator applications.
• Superior noise characteristics
: NF = 2.4 dB, |S21e|2 = 3.5 dB (f = 2 GHz)
MT3S11T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
13
6
1
40
10
100
125
−55~125
Unit
V
V
V
mA
mW
mW
°C
°C
TESM
1.Base
2.Emitter
3.Collector
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
TR
12
1 2007-11-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MT3S11T.PDF ] |
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