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Datasheet 2N4341 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4341 | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | 2N4341 | N-Channel JFET N-Channel JFETs
2N4338/4339/4340/4341
Product Summary
Part Number
2N4338 2N4339 2N4340 2N4341
VGS(off) (V) –0.3 to –1 –0.6 to –1.8 –1 to –3 –2 to –6
V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) –50 0.6 0.6 –50 0.8 1.5 –50 1.3 3.6 –50 2 9
Features
D Low Cutoff Voltage: 2N |  Siliconix | data |
| 3 | 2N4341 | N-CHANNEL JFET MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Reverse Gate-Source Voltage Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C Storage Temperature Range
Symbol vDs Vdg vgs vgsr
lG
pd
Tstg
Value 50 50 50 50 50 300 2.0
- 65 to + 200
Unit Vdc Vdc |  Motorola Semiconductors | data |
| 4 | 2N4341 | N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR |  Central Semiconductor | transistor |
| 5 | 2N4341 | N-Channel JFETs 2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338 2N4339 2N4340 2N4341
VGS(off) (V)
–0.3 to –1 –0.6 to –1.8
–1 to –3 –2 to –6
V(BR)GSS Min (V) gfs Min (mS)
–50 0.6 –50 0.8 –50 1.3 –50 2
IDSS Max (mA)
0.6 1.5 3.6 9
FEATURES
D Low C |  Vishay | data |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I  Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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