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Datasheet IDT7130SA Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IDT7130SA | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
IDT7130SA/LA IDT7140SA/LA
Features
◆ High-speed access – Commercial: 20/25/35/55/100ns (max.) – Industrial: 25/55/100ns (max.) – Military: 25/35/55/100ns (max.)
◆ Low-power operation – IDT7130/IDT7140SA — Active: 550mW (typ.) — Standby: 5mW ( | Integrated Device Technology | data |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap Infineon Technologies AG diode | | |
4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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Número de pieza | Descripción | Fabricantes | |
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