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STP80N10F7 Datasheet PDF - STMicroelectronics

Part Number STP80N10F7
Description N-CHANNEL POWER MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 

Preview ( 25 pages )
		
STP80N10F7 datasheet, circuit
STD80N10F7, STF80N10F7,
STH80N10F7-2, STP80N10F7
N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™
2
Power MOSFETs in DPAK, TO-220FP, H PAK-2 and TO-220
Datasheet - production data
TAB
3
1
DPAK
TAB
2
3
1
H2PAK-2
3
2
1
TO-220FP
TAB
3
2
1
TO-220
Features
Order codes
VDS @ RDS(on)
TJmax max
STD80N10F7
0.01 Ω
STF80N10F7
0.01 Ω
100 V
STH80N10F7-2
0.0095 Ω
STP80N10F7
0.01 Ω
ID
70 A
40 A
80 A
PTOT
85 W
30 W
110 W
Extremely low gate charge
Ultra low on-resistance
Low gate input resistance
Figure 1. Internal schematic diagram
' 7$%
' 7$%
* 
6 
* 
6 
Applications
Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
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+3$.
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Order codes
STD80N10F7
STF80N10F7
STH80N10F7-2
STP80N10F7
Table 1. Device summary
Marking
Package
80N10F7
DPAK
TO-220FP
2
H PAK-2
TO-220
Packaging
Tape and reel
Tube
Tape and reel
Tube
February 2014
This is information on a product in full production.
DocID025865 Rev 1
1/25
www.st.com

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STP80N10F7 equivalent
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 80 A
(1)
ISDM Source-drain current (pulsed)
- 320 A
(2)
VSD Forward on voltage
ISD = 80 A, VGS = 0
-
1.1 V
trr Reverse recovery time
-
ISD = 80 A, di/dt = 100 A/μs
70
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 80 V, Tj=150 °C
(see Figure 22)
- 125
- 3.6
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID025865 Rev 1
5/25
25

5 Page
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Information Total 25 Pages
Download[ STP80N10F7.PDF Datasheet ]

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