(PDF) CMPT5551 Datasheet - NPN SILICON TRANSISTOR

Número de pieza	CMPT5551
Descripción	NPN SILICON TRANSISTOR
Fabricantes	Central Semiconductor Corp
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No Preview Available ! CMPT5551 CentralTM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: SOT-23 CASE The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. Marking Code is 1FF. MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA 180 160 6.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob TEST CONDITIONS VCB=120V VCB=120V, TA=100oC IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN 180 160 6.0 80 80 30 100 UNITS V V V mA mW oC oC/W MAX 50 50 0.15 0.20 1.00 1.00 250 300 6.0 UNITS nA µA V V V V V V V MHz pF 186 1 page

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