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PDF MS10N60 Data sheet ( Hoja de datos )
| Número de pieza | MS10N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Bruckewell | |
| Logotipo |  |
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MS10N60
600V N-Channel MOSFET
General Description
The MS13N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Packing Information
Shipping：50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current –Pulsed
EAS Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dV/dt
Power Dissipation (TC=25°C)
PD
Power Dissipation (TC=100°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value
600
±30
9.5
5.7
38
700
15.6
4.5
50
0.38
-55 to +150
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
Publication Order Number: [MS10N60]
© Bruckewell Technology Corporation Rev. A -2014
1 page  
MS10N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS10N60]
© Bruckewell Technology Corporation Rev. A -2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MS10N60.PDF ] | |
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