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PDF AP4578GH-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4578GH-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4578GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Description
S1 G1
S2
G2
D1/D2 N-CH
P-CH
TO-252-4L
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
G1 G2
S1
60V
72mΩ
9A
-60V
125mΩ
-6A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current3
Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
60 -60
+25 +25
9 -6
6
30
8.9
-4
-30
0.07
V
V
A
A
A
W
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
14
110
Units
℃/W
℃/W
1
201501164
1 page  
N-Channel
10
ID=5A
8 V DS = 48 V
6
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this
area limited by
RDS(O N)
10
100us
1
1ms
T C =25 o C
Single Pulse
0.1
0.1
1
10ms
100ms
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
25
V DS =5V
20
T j =25 o C
15
T j =150 o C
10
5
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
AP4578GH-HF
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4578GH-HF.PDF ] | |
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