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Número de pieza | AP4530GM | |
Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
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No Preview Available ! Advanced Power
Electronics Corp.
AP4530GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Lower Gate Charge
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
40 -40
±20 ±20
5.7 -4.2
4.5
20
2
-3.4
-20
0.016
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
40V
36mΩ
5.7A
-40V
68mΩ
-4.2A
D2
S2
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
201101071
1 page N-Channel
12
8
ID=5A
V DS = 30 V
4
AP4530GM
f=1.0MHz
1000
C iss
100
C oss
C rss
0
0 3 6 9 12 15 18
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1
1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
30
V DS =5V
T j =25 o C
T j =150 o C
20
10
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10 100
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet AP4530GM.PDF ] |
Número de pieza | Descripción | Fabricantes |
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