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PDF 6MBI50UA-120 Data sheet ( Hoja de datos )
| Número de pieza | 6MBI50UA-120 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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6MBI50UA-120
IGBT Module U-Series 1200V / 50A 6 in one-package
Features
Applications
· High speed switching
· Inverter for Motor drive
· Uninterruptible power supply
· Voltage drive
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
· Low inductance module structure
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Rating
Unit
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
VCES
VGES
IC
Continuous Tc=25°C
1200
±20
75
V
V
A
Tc=80°C
50
ICp
1ms Tc=25°C
150
Tc=80°C
100
-IC 50
Collector Power Dissipation
Junction temperature
-IC pulse
PC
Tj
1 device
100
275
+150
W
°C
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
-40 to +125
2500
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5 N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, IC=50A Tj=25°C
Tj=125°C
Min.
–
–
4.5
–
–
Typ.
–
–
6.5
2.00
2.25
Max.
1.0
200
8.5
2.35
–
mA
nA
V
V
VCE(sat)
Tj=25°C
–
1.75 2.10
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=50A
VGE=±15V
RG=22 Ω
VGE=0V
IF=50A
IF=50A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
T=25°C
– 2.00
–6
– 0.36
– 0.21
– 0.03
– 0.37
– 0.07
– 1.85
– 1.95
– 1.60
– 1.70
––
– 4.1
– 5000
–
– nF
1.20 µs
0.60
–
1.00
0.30
2.15 V
–
1.90
–
0.35 µs
– mΩ
–Ω
B value
B
*4:Biggest internal terminal resistance among arm.
T=100°C
T=25/50°C
465
3305
495
3375
520
3450
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
–
–
–
Typ.
–
–
0.05
Max.
0.45
0.73
–
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
1 page  
6MBI50UA-120
Outline Drawings, mm
M636
IGBT Module
Equivalent Circuit Schematic
25,2 6
1
2
27,2 8
3
4
U
23,2 4
5
6
7
8
( ) shows reference dimension.
V
21,2 2
9
10
11
12
15,1 6
17 18
W
19,2 0
13,1 4
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 6MBI50UA-120.PDF ] | |
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