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What is MAGX-000035-01000S?

This electronic component, produced by the manufacturer "MA-COM", performs the same function as "Power Transistor".


MAGX-000035-01000S Datasheet PDF - MA-COM

Part Number MAGX-000035-01000S
Description Power Transistor
Manufacturers MA-COM 
Logo MA-COM Logo 


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MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Features
 GaN Depletion-Mode HEMT Microwave
Transistor
 Common-Source configuration
 No internal matching
 Broadband Class AB operation
 RoHS* Compliant
 +50 V Typical Operation
 MTTF = 600 years
Description
The MAGX-000035-01000X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF
power amplifier applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01000X is constructed with
either a flanged or flangeless ceramic package
which provides excellent thermal performance. High
breakdown voltages allow for reliable and stable
operation in extreme mismatched load conditions
compared with older semiconductor technologies.
AOprpdleicriantgioInnsformation1,2
General purpose for pulsed or CW applications:
 Commercial Wireless Infrastructure (WCDMA,
LTE, WIMAX)
 Civilian and Military Radar
 Military and Commercial Communications
 Public Radio
 Industrial, Scientific and Medical
 SATCOM
 Instrumentation
 Avionics
Rev. V3
MAGX-000035-010000 (Flanged)
MAGX-000035-01000S (Flangeless)
Ordering Information
Part Number
MAGX-000035-010000
MAGX-000035-01000S
MAGX-000035-SB2PPR
MAGX-000035-SB3PPR
Package
10 W GaN Power
Transistor (Flanged)
10 W GaN Power
Transistor (Flangeless)
1.2-1.4 GHz Evaluation
Board (Flanged)
1.2-1.4 GHz Evaluation
Board (Flangeless)
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

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MAGX-000035-01000S equivalent
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
1.2—1.4 GHz Performance With Pulsed Signal
Rev. V3
VD = 50 V
IDQ = 25 mA
Pulse = 100 μs
Duty = 15%
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MAGX-000035-01000S electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
MAGX-000035-010000The function is Power Transistor. MA-COMMA-COM
MAGX-000035-01000PThe function is Pulsed Transistor. MA-COMMA-COM
MAGX-000035-01000SThe function is Power Transistor. MA-COMMA-COM

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