MAGX-000035-010000 Datasheet PDF - MA-COM
| Part Number | MAGX-000035-010000 | |
| Description | Power Transistor | |
| Manufacturers | MA-COM | |
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There is a preview and MAGX-000035-010000 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Features
GaN Depletion-Mode HEMT Microwave
Transistor
Common-Source configuration
No internal matching
Broadband Class AB operation
RoHS* Compliant
+50 V Typical Operation
MTTF = 600 years
Description
The MAGX-000035-01000X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF
power amplifier applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01000X is constructed with
either a flanged or flangeless ceramic package
which provides excellent thermal performance. High
breakdown voltages allow for reliable and stable
operation in extreme mismatched load conditions
compared with older semiconductor technologies.
AOprpdleicriantgioInnsformation1,2
General purpose for pulsed or CW applications:
Commercial Wireless Infrastructure (WCDMA,
LTE, WIMAX)
Civilian and Military Radar
Military and Commercial Communications
Public Radio
Industrial, Scientific and Medical
SATCOM
Instrumentation
Avionics
Rev. V3
MAGX-000035-010000 (Flanged)
MAGX-000035-01000S (Flangeless)
Ordering Information
Part Number
MAGX-000035-010000
MAGX-000035-01000S
MAGX-000035-SB2PPR
MAGX-000035-SB3PPR
Package
10 W GaN Power
Transistor (Flanged)
10 W GaN Power
Transistor (Flangeless)
1.2-1.4 GHz Evaluation
Board (Flanged)
1.2-1.4 GHz Evaluation
Board (Flangeless)
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
1.2—1.4 GHz Performance With Pulsed Signal
Rev. V3
VD = 50 V
IDQ = 25 mA
Pulse = 100 μs
Duty = 15%
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MAGX-000035-010000 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MAGX-000035-010000.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| MAGX-000035-010000 | The function is Power Transistor. | MA-COM |
| MAGX-000035-01000P | The function is Pulsed Transistor. | MA-COM |
| MAGX-000035-01000S | The function is Power Transistor. | MA-COM |
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