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10N60NZ Datasheet PDF - Fairchild Semiconductor

Part Number 10N60NZ
Description FDP10N60NZ
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 



Preview ( 10 pages )
		
10N60NZ datasheet, circuit
FDP10N60NZ / FDPF10N60NZ
N-Channel UniFETTM II MOSFET
600 V, 10 A, 750 mΩ
November 2013
Features
• RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 23 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/ LED/ PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS
TO-220
G
GDS TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Dran current limited by maximum junction temperature.
S
FDP10N60NZ FDPF10N60NZ
600
±25
10 10*
6 6*
40 40*
550
10
18.5
10
185 38
1.5 0.3
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP10N60NZ
0.68
62.5
FDPF10N60NZ
3.3
62.5
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
1
www.fairchildsemi.com

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10N60NZ equivalent
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
- FDP10N60NZ
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single pulse
0.005
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 0.68oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
tR1,eRcetactnagnuglualrarPPuulslseeDDuurraattiioonn[[sseecc]]
1
10
Figure 13. Transient Thermal Response Curve
- FDPF10N60NZ
5
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.3 oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
t1R, Reecctatanngguullaarr PPuullsseeDDuuraratitoionn[s[esce]c]
1
10
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
5
www.fairchildsemi.com

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Information Total 10 Pages
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