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A1162 Datasheet PDF - Toshiba Semiconductor

Part Number A1162
Description 2SA1162
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 



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A1162 datasheet, circuit
2SA1162
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 70~400
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2712
Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC
150
mA
Base current
IB 30 mA
Collector power dissipation
PC 150 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55~125
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
IEBO
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat) IC = −100 mA, IB = −10 mA
fT VCE = −10 V, IC = −1 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
NF
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 400
⎯ −0.1 0.3 V
80 ⎯ ⎯ MHz
4
7 pF
1.0 10 dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
Marking
1 2007-11-01

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