FNA23060 Datasheet PDF - Fairchild Semiconductor
Part Number | FNA23060 | |
Description | Motion SPM 2 module | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
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FNA23060
600 V Motion SPM® 2 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 30 A 3-Phase IGBT Inverter, Including Control
ICs for Gate Drive and Protections
• Low-Loss, Short-Circuit-Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply Supported
• Built-In NTC Thermistor for Temperature Monitoring
and Management
• Adjustable Over-Current Protection via Integrated
Sense-IGBTs
• Isolation Rating of 2500 Vrms / 1 min.
General Description
The FNA23060 is a Motion SPM® 2 module providing a
fully-featured, high-performance inverter output stage for
AC induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features: under-voltage lockouts,
over-current shutdown, temperature sensing, and fault
reporting. The built-in, high-speed HVIC requires only a
single supply voltage and translates the incoming logic-
level gate inputs to high-voltage, high-current drive
signals to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Industrial Motor (AC 200 V Class)
Related Resources
• AN-9121 - Users Guide for 600V SPM® 2 Series
• AN-9076 - Mounting Guide for New SPM® 2 Package
• AN-9079 - Thermal Performance of Motion SPM® 2
Series by Mounting Torque
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNA23060
Device Marking
FNA23060
Package
SPMCA-A34
Packing Type
Rail
Quantity
6
©2015 Fairchild Semiconductor Corporation
FNA23060 Rev. 1.0
1
www.fairchildsemi.com
|
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Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ 150°C (Note 4)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per One Chip (Note 4)
Rating
450
500
600
30
60
121
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VCC Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current Sensing Input Voltage
Conditions
Applied between VCC(H), VCC(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
Rating
20
20
-0.3 ~ VCC+0.3
-0.3 ~ VCC+0.3
2
-0.3 ~ VCC+0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ Operating Junction Temperature
Conditions
TC = 25°C, TJ 150°C (Note 4)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
600
1.0
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
VCES < 600 V, Non-Repetitive, < 2 s
See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connection
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Rth(j-c)Q
Rth(j-c)F
Junction-to-Case Thermal Resistance
(Note 5)
Inverter IGBT Part (per 1 / 6 Module)
Inverter FWD Part (per 1 / 6 Module)
-
-
Notes:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Typ. Max.
- 1.03
- 1.64
Unit
°C / W
°C / W
©2015 Fairchild Semiconductor Corporation
FNA23060 Rev. 1.0
5
www.fairchildsemi.com
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