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PDF FGA3060ADF Data sheet ( Hoja de datos )
| Número de pieza | FGA3060ADF | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA3060ADF
600 V, 30 A Field Stop Trench IGBT
July 2015
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
This ADF IGBT series adopted Field Stop Trench 3rd genera-
tion IGBT which offer extreme low Vce(sat) and much faster
switching characteristics for outstanding efficiency. And this kind
of technology is fully optimized to variety PFC (Power Factor
Correction) topology ; Single boost, Multi channel interleaved
etc with over 20KHz switching performance. TO3P package
provide Super Low thermal resistance for much wider SOA for
system stability.
Applications
• PFC topology for Home appliance : Single Boost , Multi chan-
nel Interleaved etc.
C
G
C
E
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ILM (1)
ICM (2)
IF (3)
IFM (2)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 120 Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. The purpose of diode is protection for negative voltage.
©2015 Fairchild Semiconductor Corporation
FGA3060ADF Rev. 1.0
1
G
E
FGA3060ADF
600
20
30
60
30
90
90
3
1.5
6
176
88
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
1000
Cies
100 Coes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
10
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
30
tr
10
5
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
10 20 30 40 50 60 70 80
Gate Resistance, RG []
Figure 11. Switching Loss vs.
Gate Resistance
5000
1000
Eon
100
50
0
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
10 20 30 40 50 60 70 80
Gate Resistance, RG []
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
300V
9
VCC = 200V
400V
6
3
0
0 8 16 24 32 40
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
td(off)
10
10
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
10 20 30 40 50 60 70 80
Gate Resistance, RG []
Figure 12. Turn-on Characteristics vs.
Collector Current
300
100
tr
10
1
0
td(on)
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
15 30 45 60
Collector Current, IC [A]
75
90
©2015 Fairchild Semiconductor Corporation
FGA3060ADF Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA3060ADF.PDF ] | |
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