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PDF ASG304 Data sheet ( Hoja de datos )
| Número de pieza | ASG304 | |
| Descripción | DC-2000 MHz SiGe HBT Amplifier | |
| Fabricantes | ASB | |
| Logotipo |  |
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Features
Description
ASG304
DC-2000 MHz SiGe HBT Amplifier
·SiGe Technology
·18 dB Gain at 900 MHz
·+24 dBm P1dB
·+41 dBm Output IP3
·2.6 dB Noise Figure
·MTTF > 100 Years
·Single +6 V Supply
·SOT-89 Surface Mount Package
The ASG304 is designed for high linearity, high
gain, and low noise over a wide range of fre-
quency, being suitable for use in both receiver
and transmitter of wireless and wireline telecom-
munication systems. The product is manufactured
using a state-of-the-art SiGe HBT process of the
company's own, making it cost-effective and
highly reliable. The amplifiers are available in a
low cost SOT-89 package completing stringent
DC and RF tests.
Specifications 1)
Parameters
Units
Min.
Typ.
Max.
Frequency Range
MHz
250 - 2000
Gain
Input VSWR 2)
Output VSWR 2)
Output IP3 3)
dB
-
-
dBm
17.5
39
18
1.2
1.7
41
45
Noise Figure
dB
2.6
Output P1dB
dBm
24
Supply Current
mA
110
Supply Voltage
Thermal Resistance, Rth 4)
V
°C/W
6
32
1) Measurement conditions are as follows: T = 25°C, VCC = 6 V, Freq. = 900 MHz, 50 ohm system.
2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line.
3) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
4) The thermal resistance was determined at a DC power of 0.834 W (VCC=6 V, IC=139 mA) with RF signal and a lead temperature of
85.2 °C.
Absolute Maximum Ratings
Package Style: SOT-89
Applications
·CDMA, GSM, W-CDMA, PCS
·PA Driver Amplifier
·Gain Block
·CATV Amplifier
·IF Amplifier
More Information
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
ASB, Inc., 4th FI. Venture Town Bldg.,
367-17 Goijeong-Dong, Seo-Gu,
Daejon 302-716, Korea
Parameters
Rating
Operating Case Temperature
-40 to + 85°C
Storage Temperature
-40 to + 150°C
Supply Voltage
8V
Operating Junction Temperature
150°C
Input RF Power (continuous) 1)
+3 dB above Input P1dB 1)
1) Contact us for detailed information about a higher input power operation.
Application Notes
Application Circuit for 950 MHz (GSM)
Application Circuit for 1750 MHz
Application Circuit for 2250-2750 MHz
Application Circuit for 900 MHz (5 V)
Remarks
Ordering Information
Part Number
ASG304
EB-ASG304-900
EB-ASG304-2000
EB-ASG304-1750
EB-ASG304-IF
EB-ASG304-CATV
Description
High linearity medium power amplifier
(Available in tape and reel)
Fully assembled evaluation kit (900 MHz)
Fully assembled evaluation kit (2000 MHz)
Fully assembled evaluation kit (1750 MHz)
Fully assembled evaluation kit (10-200 MHz)
Fully assembled evaluation kit (50-860 MHz)
1/8 www.ASB.co.kr June 2003
1 page  
Application Circuit: 2000 MHz
Typical Performance
Frequency
Magnitude S21
Magnitude S11 1)
Magnitude S22 1)
Output P1dB
Output IP3 2)
Noise Figure
Supply Voltage
Current
2000 MHz
10.5 dB
-20 dB
-15 dB
24 dBm
40 dBm
3.5 dB
6V
110 mA
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) and inductor (L2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +8 dBm/tone
separated by 1 MHz.
Gain vs. Temperature
14
13
12
11
Frequency=2 GHz
10
-60 -40 -20
S-parameters
20
0
0 20 40
Temperature (oC)
60 80 100
85oC
25oC
-40oC
-20
-40
-60
1800
20
15
10
1900
2000
2100
Frequency (MHz)
2200
85oC
25oC
-40oC
5
0
1800
1900
2000
2100
2200
Frequency (MHz)
5/8
ASG304
Schematic
Vcc=6 V
C4= C5= C6=
100 pF 1000 pF 0.1 µF
RF IN
C1=10 pF
L2=3.3 nH
5 mm
R1=7.5 kΩ
L1=56 nH
ASG304
C2=2.7 pF
GND
50 Ω
8.75 mm
C3=5 pF
RF OUT
Board Layout (FR4, 40x40 mm2, 0.8T)
-10
-15
-20
-25
-30
1800
10
0
-10
-20
-30
1800
85oC
25oC
-40oC
1900
2000
2100
Frequency (MHz)
2200
85oC
25oC
-40oC
1900
2000
2100
Frequency (MHz)
2200
www.ASB.co.kr June 2003
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ASG304.PDF ] | |
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