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RJK0629DPN Datasheet PDF - Renesas

Part Number RJK0629DPN
Description N-Channel Power MOS FET
Manufacturers Renesas 
Logo Renesas Logo 

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RJK0629DPN
60V, 85A, 4.5mmax.
N Channel Power MOS FET
High-Speed Switching Use
Features
VDSS: 60 V
RDS(on): 4.5 m(Max)
ID: 85 A
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
4
123
1G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C, Tch 150C, L = 100 H
3. Value at Tc = 25C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
I Note2
AP
Pch Note3
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS1062EJ0200
(Previous: REJ03G1873-0100)
Rev.2.00
Apr 09, 2013
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
60
20
85
340
85
340
55
100
1.25
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6

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RJK0629DPN equivalent
RJK0629DPN
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
Vin
15 V
1 D=1
0.5
0.2
0.1
0.1 0.05
0.01
0.02
1shot pulse
0.01
10 μ
100 μ
1m
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
D
=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
VDD
50 Ω
Avalanche Waveform
EAS = 1 L IAP2
2
VDSS
VDSS VDD
IAP
ID
V (BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 5 of 6


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