SGM44601 Datasheet PDF - Shengbang Microelectronics
Part Number | SGM44601 | |
Description | DPDT Analog Switch | |
Manufacturers | Shengbang Microelectronics | |
Logo | ||
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4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
GENERAL DESCRIPTION
The SGM44601 is a high-speed, low-voltage, advanced
dual-independent double-pole/double-throw (DPDT)
CMOS analog switch that is designed to operate from a
single +1.8V to +5.5V power supply. It features
high-bandwidth (300MHz) and low on-resistance (4Ω
TYP), targeted applications for audio switching.
The SGM44601 is configured as a dual double-pole
/double-throw (DPDT) device with two logic control
inputs that control two multiplexer/demultiplexers each.
The configuration can also be used as a dual differential
2-to-1 multiplexer/ demultiplexer.
SGM44601 is available in Green TQFN-2.6×1.8-16L
package.
APPLICATIONS
Communication Systems
Cell Phones
Portable Instrumentation
Audio Signal Routing
Audio and Video Switching
PCMCIA Cards
Computer Peripherals
Modems
PDAs
FEATURES
Low Voltage Operation: 1.8V to 5.5V
Low On-Resistance: 4Ω (TYP)
Low On-Resistance Flatness
-3dB Bandwidth: 300MHz
Rail-to-Rail Input and Output Operation
High Off-Isolation: -75dB at 1MHz
Low Crosstalk: -100dB at 1MHz
Typical Power Consumption (< 0.01μW)
TTL/CMOS Compatible
Available in Green TQFN-2.6×1.8-16L Package
Extended Industrial Temperature Range:
-40℃ to +85℃
BLOCK DIAGRAM
COM1
IN1-IN2
COM2
COM3
IN3-IN4
COM4
NC1
NO1
NC2
NO2
NC3
NO3
NC4
NO4
SG Micro Corp
www.sg-micro.com
REV. A. 3
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SGM44601
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
ELECTRICAL CHARACTERISTICS
(V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = -40℃ to +85℃. Typical values are at V+ = +3.0V, TA = +25℃, unless otherwise
noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
On-Resistance
VNO, VNC, VCOM
RON
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
-40℃ to +85℃
+25℃
-40℃ to +85℃
0
V+
10 15
18
V
Ω
Ω
On-Resistance Match Between
Channels
RON
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
+25℃
-40℃ to +85℃
13
4
Ω
Ω
On-Resistance Flatness
Source OFF Leakage Current
Channel ON Leakage Current
DIGITAL INPUTS
RFLAT(ON)
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
INC(OFF), INO(OFF)
INC(ON), INO(ON),
ICOM(ON)
V+ = 3.6V, VNO or VNC = 3.3V/0.3V,
VCOM = 0.3V/3.3V
V+ = 3.6V, VCOM = 0.3V/3.3V,
VNO or VNC = 0.3V/3.3V or floating
+25℃
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
69
12
Ω
Ω
1 μA
1 μA
Input High Voltage
Input Low Voltage
Input Leakage Current
DYNAMIC CHARACTERISTICS
VINH
VINL
IIN
V+ = 2.7V, VIN = 0V or2.7V
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
1.5
V
0.4 V
1 μA
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
Off Isolation
tON
tOFF
tD
Q
OISO
VNC or VNO = 1.5V, RL = 300Ω,
CL = 35pF, Test Circuit2
VNC or VNO = 1.5V, RL = 300Ω,
CL = 35pF, Test Circuit4
VG = GND, RG = 0Ω, CL = 1.0nF,
Q = CL × VOUT, Test Circuit3
Signal = 0dBm, RL = 50Ω, 1MH
Test Circuit5
10MHz
+25℃
+25℃
+25℃
+25℃
+25℃
+25℃
45 ns
44 ns
23 ns
2.6 pC
-75 dB
-55 dB
Channel-to-Channel Crosstalk
-3dB Bandwidth
Channel ON Capacitance
XTALK
Signal = 0dBm, RL = 50Ω,
Test Circuit6
BW
Signal = 0dBm, RL = 50Ω,
Test Circuit7
CNC(ON), CNO(ON),
CCOM(ON)
1MHz
10MHz
+25℃
+25℃
+25℃
+25℃
-100
-60
300
43.2
dB
dB
MHz
pF
SG Micro Corp
www.sg-micro.com
5
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