SGM44599 Datasheet PDF - Shengbang Microelectronics
Part Number | SGM44599 | |
Description | DPDT Analog Switch | |
Manufacturers | Shengbang Microelectronics | |
Logo | ||
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4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
GENERAL DESCRIPTION
The SGM44599 is a high-speed, low-voltage, advanced
dual-independent double-pole/double-throw (DPDT)
CMOS analog switch that is designed to operate from a
single +1.8V to +5.5V power supply. It features high-
bandwidth (300MHz) and low on-resistance (4Ω TYP).
The SGM44599 is configured as a dual double-pole
/double-throw (DPDT) device with two logic control
inputs that control two multiplexer/demultiplexer each.
The configuration can also be used as a dual differential
2-to-1 multiplexer/ demultiplexer.
SGM44599 is available in Green TQFN-3×3-16L and
TQFN-2.5×2.5-16L packages.
FEATURES
● Low Voltage Operation: 1.8V to 5.5V
● On-Resistance: 4Ω (TYP)
● Low On-Resistance Flatness
● -3dB Bandwidth: 300MHz
● Rail-to-Rail Input and Output Operation
● High Off-Isolation: -75dB at 1MHz
● Low Crosstalk: -100dB at 1MHz
● Typical Power Consumption (< 0.01μW)
● TTL/CMOS Compatible
● Available in Green TQFN-3×3-16L and
TQFN-2.5×2.5-16L Packages
● Extended Industrial Temperature Range:
-40°C to +85°C
BLOCK DIAGRAM
APPLICATIONS
Communication Systems
Cell Phones
Portable Instrumentation
Audio Signal Routing
Audio and Video Switching
PCMCIA Cards
Computer Peripherals
Modems
PDAs
COM1
IN1-IN2
COM2
COM3
IN3-IN4
COM4
NC1
NO1
NC2
NO2
NC3
NO3
NC4
NO4
SG Micro Corp
www.sg-micro.com
REV. A. 4
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SGM44599
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
ELECTRICAL CHARACTERISTICS
(V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = -40°C to +85°C. Typical values are at V+ = +3.0V, TA = +25°C, unless otherwise
noted.)
PARAMETER
ANALOG SWITCH
Analog Signal Range
On-Resistance
SYMBOL
CONDITIONS
VNO, VNC, VCOM
RON
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
On-Resistance Match
Between Channels
RON
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
On-Resistance Flatness
RFLAT(ON)
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
Source OFF Leakage Current
INC(OFF), INO(OFF)
V+ = 3.6V, VNO or VNC = 3.3V/0.3V,
VCOM = 0.3V/3.3V
Channel ON Leakage Current
INC(ON), INO(ON), V+ = 3.6V, VCOM = 0.3V/3.3V,
ICOM(ON)
VNO or VNC = 0.3V/3.3V or floating
DIGITAL INPUTS
Input High Voltage
Input Low Voltage
Input Leakage Current
DYNAMIC CHARACTERISTICS
VINH
VINL
IIN
V+ = 2.7V, VIN = 0V or 2.7V
Turn-On Time
Turn-Off Time
tON VNC or VNO = 1.5V, RL = 300Ω,
tOFF CL = 35pF, Test Circuit2
Break-Before-Make
Time Delay
tD
VNC or VNO = 1.5V, RL = 300Ω,
CL = 35pF, Test Circuit4
Charge Injection
Q
VG = GND, RG = 0Ω, CL = 1.0nF,
Q = CL × VOUT, Test Circuit3
Off Isolation
OISO
Signal = 0dBm, RL = 50Ω, 1MHz
Test Circuit5
10MHz
Channel-to-Channel Crosstalk
XTALK
Signal = 0dBm, RL = 50Ω, 1MHz
Test Circuit6
10MHz
-3dB Bandwidth
Channel ON Capacitance
BW
Signal = 0dBm, RL = 50Ω,
Test Circuit7
CNC(ON), CNO(ON),
CCOM(ON)
TEMP
MIN TYP MAX UNITS
-40°C to +85°C
+25°C
-40°C to +85°C
+25°C
-40°C to +85°C
+25°C
-40°C to +85°C
-40°C to +85°C
0
-40°C to +85°C
V+
10 15
18
13
4
69
12
1
1
V
Ω
Ω
Ω
Ω
Ω
Ω
μA
μA
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
1.5
V
0.4 V
1 μA
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
38.0
44.0
5.8
2.6
-75
-55
-100
-60
300
43.2
ns
ns
ns
pC
dB
dB
dB
dB
MHz
pF
SG Micro Corp
www.sg-micro.com
5
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