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What is MMBT2907A?

This electronic component, produced by the manufacturer "SeCoS", performs the same function as "General Purpose Transistor".


MMBT2907A Datasheet PDF - SeCoS

Part Number MMBT2907A
Description General Purpose Transistor
Manufacturers SeCoS 
Logo SeCoS Logo 


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Elektronische Bauelemente
MMBT2907A
PNP Silicon
General Purpose Transistor
FEATURES
· Epitaxial Planar Die Construction
· Complementary NPN Type Available
(MMBT2222A)
· Ideal for Medium Power Amplification and
Switching
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
1
BASE
2
EMITTER
V
A
L
3
Top View
12
G
BS
C
3
1
2
D
H
K
J
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2907 = M2B; MMBT2907A = 2F
Symbol
VCEO
VCBO
VEBO
IC
2907
2907A
–40 –60
–60
–5.0
–600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Min Max Unit
Vdc
–40 —
–60 —
–60 — Vdc
–5.0 —
Vdc
— –50 nAdc
µAdc
— –0.020
— –0.010
(VCB = –50 Vdc, IE = 0, TA = 125°C)
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
MMBT2907
MMBT2907A
— –20
— –10
IB — –50 nAdc
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
REM : Thermal Clad is a trademark of the Bergquist Company.
Any changing of specification will not be informed individual
Page 1 of 4


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MMBT2907A datasheet


1. - 60V, 600mA, PNP Transistor

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